WO2009069853A1 - Gaine thermique pour boîtiers d'encapsulation sur tranche et son procédé de fabrication - Google Patents

Gaine thermique pour boîtiers d'encapsulation sur tranche et son procédé de fabrication Download PDF

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Publication number
WO2009069853A1
WO2009069853A1 PCT/KR2008/000797 KR2008000797W WO2009069853A1 WO 2009069853 A1 WO2009069853 A1 WO 2009069853A1 KR 2008000797 W KR2008000797 W KR 2008000797W WO 2009069853 A1 WO2009069853 A1 WO 2009069853A1
Authority
WO
WIPO (PCT)
Prior art keywords
heat dissipation
dissipation main
main body
heat
sidewalls
Prior art date
Application number
PCT/KR2008/000797
Other languages
English (en)
Inventor
Yun Kyung Myung
Original Assignee
Il Chang Precision Co., Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Il Chang Precision Co., Ltd filed Critical Il Chang Precision Co., Ltd
Publication of WO2009069853A1 publication Critical patent/WO2009069853A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H01L21/4878—Mechanical treatment, e.g. deforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73267—Layer and HDI connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device

Definitions

  • the present invention relates to a heat slug for wafer level chip scale packages and a method of manufacturing heat slugs, in which precise construction is dually achieved in such a way as to form heat dissipation main bodies by pressing a metal plate having excellent heat dissipation characteristics, which is in a coil state, insert the heat dissipation main bodies in a mold, and form sidewalls using resin material through injection molding, thus overcoming the disadvantages of package characteristics, effectively improving heat dissipation problems, attributable to high integration and high speed, by adopting metal having an aesthetic appearance and excellent heat dissipation characteristics, facilitating the production of wafer level chip scale packages by facilitating mass production, reducing manufacturing costs, and facilitating assembly automation in a wafer packaging process.
  • a Wafer Level Chip Scale Package (WLCSP), which is based on a technology that enables packaging at the wafer level, not only provides an advantage in manufacture, but also provides excellent heat dissipation performance because it enables mounting at the wafer level.
  • Such a WLCSP is manufactured so that the overall dimensions, including the thickness, are small. Accordingly, as shown in FIG. 1, a heat dissipating means for the WLCSP is constructed using a heat slug 100 having a square cover structure, the construction of which differs greatly from that of an existing heat dissipating means for memory modules.
  • the heat slug 100 is configured such that the upper surface 110 and the sidewalls
  • edges, at which the upper surface 110 and the sidewalls 131 and 132 are joined to each other, and the edges, at which the sidewalls 131 and the sidewalls 132 are joined to each other, must be formed precisely perpendicular to each other in order to realize accurate seating of the WLCSP 2.
  • an object of the present invention is to provide a heat slug for wafer level chip scale packages and a method of manufacturing heat slugs, in which precise construction is dually achieved in such a way as to form heat dissipation main bodies by pressing a metal plate having excellent heat dissipation characteristics, which is in a coil state, insert the heat dissipation main bodies in a mold, and form sidewalls using resin material through injection molding, thus overcoming the disadvantages of package characteristics, effectively improving heat dissipation problems, attributable to high integration and high speed, by adopting metal having an aesthetic appearance and excellent heat dissipation characteristics, facilitating the production of wafer level chip scale packages by facilitating mass production, reducing manufacturing costs, and facilitating assembly automation in a wafer packaging process.
  • the present invention provides a method of manufacturing heat slugs for WLCSPs, each of the heat slugs having a square cover structure and including a heat dissipation main body, which is configured to come into contact with the upper surface of a WLCSP and to perform heat dissipation, and sidewalls, which are configured to surround the heat dissipation main body, the method including:
  • the present invention provides a heat slug for WLCSPs, the heat slug having a square cover structure, including a heat dissipation main body, which is configured to come into contact with an upper surface of a
  • the WLCSP and to perform heat dissipation, and sidewalls, which are configured to surround the heat dissipation main body, wherein: [14] the sidewalls, which are made of resin material, are formed around the heat dissipation main body, which is formed using a metal plate, through injection molding using the manufacturing method.
  • FIG. 1 is a view showing the construction of a conventional heat slug
  • FIG. 2 is a flowchart illustrating a method of manufacturing heat slugs, according to an embodiment of the present invention
  • FIG. 3 is a perspective view of a heat dissipation main body array coil according to an embodiment of the present invention.
  • FIG. 4 is a view showing the construction of a heat slug array reel according to an embodiment of the present invention.
  • FIG. 5 is a view showing the construction of a single heat slug according to an embodiment of the present invention.
  • FIG. 6 is a detailed sectional view taken along line A-A of FIG. 5;
  • FIG. 7 is a detailed sectional view taken along line B-B of FIG. 5;
  • FIG. 8 is a detailed sectional view taken along line C-C of FIG. 5;
  • FIG. 9 is a perspective view of a heat dissipation main body array coil, portions of which are omitted, according to an embodiment of the present invention.
  • FIG. 10 is a perspective view of a heat dissipation main body array coil according to another embodiment of the present invention.
  • FIG. 11 is a view showing a heat slug according to another embodiment of the present invention.
  • first bridges 15b second bridges
  • FIG. 3 is a perspective view of a heat dissipation main body array coil according to an embodiment of the present invention
  • FIG. 4 is a view showing the construction of a heat slug array reel according to an embodiment of the present invention
  • FIG. 5 is a view showing the construction of a single heat slug according to an embodiment of the present invention.
  • each of the heat slugs having a square cover structure and including a heat dissipation main body 10, which is configured to come into contact with the upper surface of a WLCSP 2 and to perform heat dissipation, and sidewalls 30, which are configured to surround the heat dissipation main body includes a heat dissipation main body array coil pressing step S 1 of forming a heat dissipation main body array coil 10b such that a plurality of heat dissipation main bodies 10 is continuously arranged in a metal plate coil 10a at predetermined intervals using bridges 15 through a pressing process, and a sidewall injection molding step S3 of inserting the heat dissipation main body array coil 10b in a mold and forming the sidewalls 30 around each of the heat dissipation main bodies 10 by injection molding using resin material.
  • a heat dissipation main body array coil surface treatment step S2 be performed after the heat dissipation main body array coil pressing step Sl.
  • the heat dissipation main body array coil surface treatment step S2 may be performed using various methods, including an electro-deposition coating method.
  • the heat dissipation main body array coil 10b include first bridges 15a, which are connected to first and second sides of the heat dissipation main bodies 10, and second bridges 15b, which are located in the outer portion of the heat dissipation main body array coil 10b, are connected with the first bridges 15 a, and are configured to maintain arrangement intervals between the heat dissipation main bodies 10.
  • first bridges 15a be formed such that the widths thereof are gradually decreased toward the connection leading edges of the respective heat dissipation main bodies, or cutting lines are formed, in order to facilitate the later cutting of the first bridges 15a, and that through-holes 17 be formed in the second bridges in the pitches in which the heat dissipation main bodies are formed.
  • the through-holes 17 function as transfer reference positions at subsequent steps, and are fitted into jig pins in a WLCSP assembly line to thus enable transfer and automatic assembly.
  • each of the heat dissipation main bodies 10 be configured such that a plurality of prominence and depression coupling portions 11 for connection the sidewalls 30 is formed at the edges of a corresponding rectangular plate (refer to FIGS. 3 to 8).
  • the prominence and depression coupling portions 11 are formed to have a partially uneven surface structure in order to enable insertion into the sidewalls 30 and connection with the sidewalls 30, and are symmetrically formed to maintain balance. Due to the prominence and depression coupling portions 11, the sidewalls 30, which are made of resin material, are formed to have a partially uneven surface structure with respect to reference lines.
  • the prominence and depression coupling portions 11 may be configured such that, for example, the longitudinal portions of the sidewalls 30, which are made of resin material, are formed to have a protruding structure, and the transverse portions of the sidewalls 30 are formed to have a hollow structure (refer to FIG. 5).
  • each of the heat dissipation main bodies 10 may be configured such that a plurality of depressions 13 for preventing the sidewalls 30 from being released or separated is formed in the edge portions of a corresponding rectangular plate (refer to FIG. 9).
  • the depressions 13 be curved depressions.
  • the heat dissipation main body array coil 10b may be configured such that a plurality of heat dissipation main body strings is formed therein, as shown in FIG. 10.
  • connection portions between each heat dissipation main body 10 and the sidewalls 30 may be formed to be linear without having any protrusions or depressions, as shown in FIG. 11.
  • the heat slug 1 for WLCSPs according to the present invention which has a square cover structure and includes a heat dissipation main body, which is configured to come into contact with an upper surface of a WLCSP 2 and perform heat dissipation, and sidewalls 30, which are configured to surround the heat dissipation main body, is configured such that the sidewalls 30, which are made of resin material, are formed around the heat dissipation main body 10, which is formed using a metal plate, through injection molding using the manufacturing method.
  • the heat dissipation main bodies 10 are formed using metal plates, each having excellent heat conduction and heat dissipation characteristics, and the sidewalls 30 of each main body are made of a different material, such as resin material, through insert injection molding, so that the present invention enables precise construction and mass production while providing sufficient heat dissipation performance.
  • the heat dissipation main body array coil 10b is formed by unrolling a metal plate from an original metal plate coil 10a, which is wound in a roll state, causing the metal plate to enter a press apparatus, and removing remaining portions through punching such that the heat dissipation main bodies 10 are connected to the bridges 15, and thus productivity is notably improved. Subsequently, the heat dissipation main body array coil 10b is wound again in a roll state.
  • the surface treatment step is performed in the state of the above- described heat dissipation main body array coil 10b and, subsequently, the sidewalls 30 are formed through injection molding while the heat dissipation main body array coil 10b is inserted into an injection molding apparatus at predetermined intervals, so that the heat slug array reel Ia, in which heat slugs are continuously arranged, is achieved.
  • the heat dissipation main bodies 10, which are formed using a metal plate, are formed to be continuously arranged by pressing in a coil state, and the sidewalls are formed around each of the heat dissipation main bodies 10 using resin material through insert injection molding, so that longitudinal sidewalls 31 and transverse sidewalls 32, which have different thicknesses, can be accurately and easily formed, the sidewalls 30 can be formed perpendicular to the heat dissipation main body 10, and the edges, at which the sidewalls and the sidewalls are joined to each other, can also be accurately and easily formed perpendicular to each other, with the result that the uniformity of a product and the heat dissipation performance can be improved, and productivity can be notably improved to an extent that cannot be achieved by a conventional cutting process, thus facilitating the production of WLCSPs and remarkably reducing manufacturing costs.
  • the bonding of the heat slug for the WLCSP 2 may be achieved using various means, such as a bonding pad, an epoxy or an adhesive agent.
  • the heat slug array reel Ia in which the heat slugs 1 are continuously arranged at the predetermined intervals, or the heat slugs 1, which are separated from each other and are arranged in a tray, is provided in a wafer packaging process site, and is input to an automated assembly line.
  • the heat dissipation main bodies and the sidewalls are dually formed, the heat dissipation main bodies are formed by pressing a metal plate, having an excellent heat dissipation characteristic, in a coil state, and are inserted into a mold, and the sidewalls are formed using resin material through insert injection molding, so that precise construction can be easily achieved and productivity can be notably improved, the production of WLCSPs can be facilitated, manufacturing costs can be reduced, and assembly automation in a wafer packaging process can be facilitated, thus remarkably improving assembly productivity.

Abstract

L'invention porte sur une gaine thermique pour boîtiers d'encapsulation sur tranche (WLCSP) et sur un procédé de fabrication de gaines thermiques. La gaine thermique comporte un corps principal de dissipation thermique conçu pour entrer en contact avec la surface supérieure d'un boîtier WLCSP et pour effectuer une dissipation thermique; et des parois latérales conçues pour entourer le corps principal de dissipation thermique. Le procédé consiste à presser la bobine de groupement de corps principaux de dissipation thermique pour former une bobine de groupement de corps principaux de dissipation thermique pour agencer une pluralité de corps principaux de dissipation thermique de façon continue dans une bobine de plaque métallique à intervalles prédéterminés par des ponts; à mouler par injection des parois latérales par insertion de la bobine de groupement de corps principaux de dissipation thermique dans un moule et par formation des parois latérales autour de chacun des corps principaux de dissipation thermique par moulage par injection d'un matériau en résine.
PCT/KR2008/000797 2007-11-30 2008-02-12 Gaine thermique pour boîtiers d'encapsulation sur tranche et son procédé de fabrication WO2009069853A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020070123632A KR100898404B1 (ko) 2007-11-30 2007-11-30 웨이퍼 레벨 패키지의 써멀캡 및 그 제조방법
KR10-2007-0123632 2007-11-30

Publications (1)

Publication Number Publication Date
WO2009069853A1 true WO2009069853A1 (fr) 2009-06-04

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Application Number Title Priority Date Filing Date
PCT/KR2008/000797 WO2009069853A1 (fr) 2007-11-30 2008-02-12 Gaine thermique pour boîtiers d'encapsulation sur tranche et son procédé de fabrication

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KR (1) KR100898404B1 (fr)
WO (1) WO2009069853A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010019181A1 (en) * 1999-12-31 2001-09-06 Jung-Yu Lee Structure of heat slug-equipped packages and the packaging method of the same
US6900535B2 (en) * 2002-05-01 2005-05-31 Stmicroelectronics, Inc. BGA/LGA with built in heat slug/spreader
US6946729B2 (en) * 2002-04-19 2005-09-20 Advanced Semiconductor Engineering, Inc. Wafer level package structure with a heat slug
US20060063306A1 (en) * 2004-09-23 2006-03-23 Ki-Won Choi Semiconductor package having a heat slug and manufacturing method thereof
US20060103009A1 (en) * 2004-11-13 2006-05-18 Stats Chippac Ltd. Integrated circuit package system with heat slug

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010019181A1 (en) * 1999-12-31 2001-09-06 Jung-Yu Lee Structure of heat slug-equipped packages and the packaging method of the same
US6946729B2 (en) * 2002-04-19 2005-09-20 Advanced Semiconductor Engineering, Inc. Wafer level package structure with a heat slug
US6900535B2 (en) * 2002-05-01 2005-05-31 Stmicroelectronics, Inc. BGA/LGA with built in heat slug/spreader
US20060063306A1 (en) * 2004-09-23 2006-03-23 Ki-Won Choi Semiconductor package having a heat slug and manufacturing method thereof
US20060103009A1 (en) * 2004-11-13 2006-05-18 Stats Chippac Ltd. Integrated circuit package system with heat slug

Also Published As

Publication number Publication date
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